SCAPE aims at integrating the main building blocks of the project’s high voltage power converters (switching cells) using chip-embedding technology. This approach provides many benefits (compactness, low parasitic inductance, etc.) but requires a number of specific technological steps.
Among these are:
– a technique for selectively depositing thick (around 10 µm) Copper layers on top of the SiC MOSFET dies;
– an optimum die-attach layer based on Silver sintered particles for establishing the MOSFETs backside contact,
– and the design of the multilayer PCB stack implementing the switching-cells with the embedded power devices, assisted by multiphysics simulations (thermal, electromagnetic).